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SiC MOSFET晶圆
LXPSEMI SiC MOSFET在导通电阻，开关损耗，高温运行和导热性上的优异特性极大地提升了电力电子系统的转换效率和功率密度，并使得系统的整体成本降低。澜芯半导体碳化硅MOSFET具有750V至1700V的扩展电压范围，采用先进的工艺技术平台，具有杰出的开关性能和极低的单位面积导通电阻。
澜芯半导体SiC MOSFET：
1.汽车级和工业级合格器件；
2.高结温能力(TJ = 175°C,最高200°C)；
3.超高开关工作频率和极低开关损耗；
4.低导通电阻；
5.栅极驱动可兼容现有IC；
6.稳定的超快速本体二极管。
我们的SiC MOSFET圆片产品包括裸晶圆或卷带包装Bare Dies。
澜芯SiC MOSFET专为满足汽车和工业应用的严格要求而设计。
澜芯半导体SiC MOSFET主要特点包括：
1200V SiC MOSFET晶圆产品

Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX1C080N120B


Mass ProductG1(Good EMI)Wafer Dicing1200V80mΩ29AIndustrial175°C

LX1C040N120B


Mass ProductG1(Good EMI)Wafer Dicing1200V40mΩ59AIndustrial175°C

LX2C080N120B


Mass ProductG2(Fast)Wafer Dicing1200V80mΩ27AIndustrial175°C

LX2C060N120B


Mass ProductG2(Fast)Wafer Dicing1200V60mΩ35AIndustrial175°C

LX2C030N120B


Mass ProductG2(Fast)Wafer Dicing1200V30mΩ72AIndustrial175°C

LX2C014N120B


Mass ProductG2(Fast)Reel Tape1200V14mΩ149AIndustrial175°C

LX2C012N120A


Mass ProductG2(Fast)Reel Tape1200V12mΩ168AIndustrial175°C













Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX1C080N120B


Mass ProductG1(Good EMI)Wafer Dicing1200V80mΩ29AIndustrial175°C

LX1C040N120B


Mass ProductG1(Good EMI)Wafer Dicing1200V40mΩ59AIndustrial175°C

LX2C080N120B


Mass ProductG2(Fast)Wafer Dicing1200V80mΩ25AIndustrial175°C

LX2C060N120B


Mass ProductG2(Fast)Wafer Dicing1200V60mΩ35AIndustrial175°C

LX2C030N120B


Mass ProductG2(Fast)Wafer Dicing1200V30mΩ70AIndustrial175°C

LX2C014N120B


Mass ProductG2(Fast)Reel Tape1200V14mΩ150AIndustrial175°C

LX2C012N120A


Mass ProductG2(Fast)Reel Tape1200V12mΩ176AIndustrial175°C













750V SiC MOSFET晶圆产品

Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX2C009N075B


2024 MPG2(Fast)Reel Tape750V9.5mΩ250AIndustrial175°C

LX2C011N075B


2024 MPG2(Fast)Reel Tape750V11mΩ200AIndustrial175°C

LX2C025N075B


2024 MPG2(Fast)Wafer Dicing750V25mΩ100AIndustrial175°C

LX2C048N075B


2024 MPG2(Fast)Wafer Dicing750V48mΩ38AIndustrial175°C

LX2C065N075B


2024 MPG2(Fast)Wafer Dicing750V65mΩ45AIndustrial175°C













Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX2C009N075B


2024 MPG2(Fast)Reel Tape750V9.5mΩ250AIndustrial175°C

LX2C011N075B


2024 MPG2(Fast)Reel Tape750V11mΩ200AIndustrial175°C

LX2C025N075B


2024 MPG2(Fast)Wafer Dicing750V25mΩ100AIndustrial175°C

LX2C048N075B


2024 MPG2(Fast)Wafer Dicing750V48mΩ38AIndustrial175°C

LX2C065N075B


2024 MPG2(Fast)Wafer Dicing750V65mΩ45AIndustrial175°C













1700V SiC MOSFET晶圆产品

Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX2C015N170B


2024 MPG2(Fast)Wafer Dicing1700V15mΩ100AIndustrial175°C

LX2C017N170B


2024 MPG2(Fast)Wafer Dicing1700V17mΩ88AIndustrial175°C

LX2C036N170B


2024 MPG2(Fast)Wafer Dicing1700V36mΩ75AIndustrial175°C

LX2C1k0N170B


2024 MPG2(Fast)Wafer Dicing1700V1000mΩ6AIndustrial175°C

LX2C3k0N170B


2024 MPG2(Fast)Wafer Dicing1700V3000mΩ4AIndustrial175°C













Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX2C015N170B


2024 MPG2(Fast)Wafer Dicing1700V15mΩ100AIndustrial175°C

LX2C017N170B


2024 MPG2(Fast)Wafer Dicing1700V17mΩ88AIndustrial175°C

LX2C036N170B


2024 MPG2(Fast)Wafer Dicing1700V36mΩ75AIndustrial175°C

LX2C1k0N170B


2024 MPG2(Fast)Wafer Dicing1700V1000mΩ6AIndustrial175°C

LX2C3k0N170B


2024 MPG2(Fast)Wafer Dicing1700V3000mΩ4AIndustrial175°C













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